Mingjiada Electronics supplies the IRF1310NPBF, a high-performance 100V N-channel power MOSFET introduced by Infineon, which delivers outstanding performance in efficient power management applications and is an indispensable key component in numerous electronic devices.
Product Overview Of IRF1310NPBF
The IRF1310NPBF is a high-performance N-channel power MOSFET featuring advanced HEXFET® technology, offering extremely low on-resistance and excellent switching performance. The IRF1310NPBF is packaged in a TO-220AB package and is ideal for high-current, high-voltage power management applications such as switching power supplies, motor drives, and industrial control systems. With its high reliability and efficiency, it is the preferred choice for engineers in power supply design.
Features and Parameters Of IRF1310NPBF
Basic Electrical Parameters: The IRF1310NPBF has a maximum drain-source voltage of 100V, a continuous drain current of up to 42A, and a maximum power dissipation of 160W. It features extremely low on-resistance, as low as 36mΩ @10V, 22A. Its gate charge is 110nC @10V, input capacitance is 1.9nF @25V, and reverse transfer capacitance is 230pF @25V.
Operating Temperature Range: The IRF1310NPBF can operate stably within a wide temperature range of -55°C to +175°C, adapting to various harsh operating environments and ensuring reliable operation of the equipment under different temperature conditions.
Package characteristics: The IRF1310NPBF is housed in a TO-220AB package with dimensions of 10.54mm in length, 4.4mm in width, and 8.77mm in height, offering excellent heat dissipation performance and electrical isolation capabilities. The packaging material provides high-voltage isolation capability up to 2.5kVRMS and a creepage distance of 4.8mm, effectively preventing issues such as leakage and short circuits.
Dynamic performance parameters: IRF1310NPBF features fast switching speed, enabling efficient power conversion. Its typical rise time is 56ns, and the fall time is 40ns, performing excellently in high-frequency switching applications. Additionally, IRF1310NPBF has avalanche energy absorption capability, capable of withstanding certain levels of overload and transient voltage surges, enhancing system reliability and safety.
Detailed Parameters Of IRF1310NPBF
FET Type: N-channel MOSFET
Drain-Source Voltage: 100V
Continuous Drain Current: 42A (at 25°C)
On-Resistance: 36mΩ (at 10V, 22A)
Gate Charge: 110nC (at 10V)
Input Capacitance: 1900pF (at 25V)
Gate-source voltage: ±20V
Threshold voltage: 2V to 4V
Package type: TO-220AB (through-hole mounting)
Operating temperature range: -55°C to +175°C
Power dissipation: 160W (at 25°C)
Typical Applications
The IRF1310NPBF is widely used in the following fields:
Switching Power Supplies (SMPS): Used in AC-DC conversion and DC-DC modules to enhance energy efficiency.
Motor Drives: Suitable for industrial motor control, power tools, and automated equipment.
Power Management Modules: Used in UPS systems, inverters, and battery management systems.
Automotive Electronics: Meets high reliability requirements for in-vehicle power supplies and LED drivers.
Consumer Electronics: Such as audio amplifiers and high-power chargers.
Supply and Support
Mingjiada Electronics, as a renowned electronic component distributor, offers genuine IRF1310NPBF products with ample inventory and fast shipping. For technical support or bulk purchases of IRF1310NPBF, please contact Mingjiada Electronics for the best quote.
Contact Information
Phone: +86 13410018555
Email: sales@hkmjd.com
Website: www.integrated-ic.com
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