Şirket Blog About Mingjiada Supplies Infineon CoolSiC Silicon Carbide MOSFETs | In-Stock Selection for AI Data Centers and Server Power Supplies

The power consumption of a single AI server cabinet is rising from the hundreds of kilowatts to the megawatts, and traditional 48V low-voltage power supply systems have nearly reached their physical limits in terms of efficiency, thermal management, and power density. Architectures combining 800V high-voltage direct current (HVDC) with a 48V intermediate bus are being rapidly adopted, and the combined penetration rate of SiC and GaN wide-bandgap devices in AI data center power supplies has approached 20%, with room for further growth still expanding rapidly. In this round of power architecture restructuring, Infineon’s CoolSiC™ MOSFETs—with their high voltage, low loss, and high thermal reliability—have become the top choice for AC-DC rectification and high-voltage DC-DC conversion in the front end of AI server power supplies. As an authorized independent distributor with long-standing expertise in Infineon power semiconductors, Shenzhen Mingjiada Electronics Co., Ltd. now offers the full range of CoolSiC™ MOSFETs for AI data centers and server power supplies in genuine, in-stock quantities. The lineup covers key models such as the 750V G2, 1200V G2, and 650V/440V G2, providing reliable component support for PSU design and mass production.

Why AI Server Power Supplies Are Accelerating the Shift to Silicon Carbide

AI loads are characterized by severe current fluctuations and demanding power density requirements; the switching losses of traditional silicon-based MOSFETs under high-frequency, high-voltage conditions have become a bottleneck for efficiency. Infineon’s CoolSiC™ MOSFETs feature low temperature dependence of on-resistance, with switching losses that show virtually no temperature drift, and extremely low body diode reverse recovery charge. These characteristics directly translate into three system-level benefits: higher full-load efficiency, smaller magnetic components and heat sink volume, and a wider safe operating area.

In terms of power supply topologies, Infineon’s 3 kW–12 kW server PSU solutions based on 650 V CoolSiC™ MOSFETs achieve full-load efficiencies of approximately 97.5% and power densities of up to 100 W/in³. At higher power levels, the 1200V CoolSiC™ MOSFET G2 is used in the high-voltage power stage of a 30 kW T-type PFC, paired with a CoolGaN™ bidirectional switch, achieving a peak efficiency exceeding 99%. For 12 kW high-power-density PSUs in AI servers, a reference design based on silicon carbide has achieved a power density of 113 W/in³ and a peak efficiency of 97.8%, while maintaining a power factor above 0.995 across the 40%–100% load range. These figures demonstrate that SiC is no longer merely an “option” for AI power supplies, but rather a fundamental component essential for achieving next-generation power density targets.

Infineon’s Key CoolSiC™ MOSFET Product Lines for AI Server Power Supplies

750V CoolSiC™ MOSFET G2—the workhorse component for AI server PSUs. The second-generation 750V G2 series is optimized for server power supply units (PSUs) and high- and low-voltage DC-DC converters. Compared to the previous generation, it offers a 20%–35% improvement in Form of Merit (FOM), passes the avalanche test at 100% load, supports a maximum junction temperature of 200°C, and extends the negative gate drive voltage range to −7V to −11V, effectively countering parasitic conduction effects. The series includes three major package families: the IMBG75R (PG-TO263-7 surface-mount, with built-in Kelvin source), the IMDQ75R (PG-HDSOP-22 top-cooled Q-DPAK, designed for ultra-high power density, with low on-resistance models capable of handling extremely high currents), and the IMZA75R (PG-TO247-4 through-hole package, suitable for high-voltage DC-DC converters and heatsink mounting). With on-resistance values ranging from 7 mΩ to 60 mΩ, the series covers the full power range from totem-pole PFC to high-voltage DC-DC applications.

1200V CoolSiC™ MOSFET G2—The Core Choice for 800V HVDC and High-Side Applications. 1200V SiC MOSFETs have become the mainstream choice for high-voltage power supplies in AI data centers. The Infineon 1200V G2 series utilizes a Q-DPAK top-cooled package that separates electrical connections from the thermal interface, combining SMT automation efficiency with thermal performance that exceeds the standard TO-247. Supporting a 950V RMS operating voltage, it is suitable for PFC and DC-DC stages in 800V DC bus architectures. Representative models IMCQ120R017M2H and IMCQ120R034M2H have entered the sampling and introduction phases for AI power supply designs.

650V and 440V CoolSiC™ MOSFETs—Precise Matches for Complementary and Segmented Topologies. The 650V CoolSiC™ discrete devices are specifically developed for server SMPS and excel in hard-switching topologies such as totem-pole PFC, Vienna rectifiers, and ANPC, while also covering soft-switching CLLC/LLC/DAB applications in 3kW–12kW PSUs. The 440V G2 series fills the performance gap between 200V trench silicon MOSFETs and 600V super-junction MOSFETs. Targeting AI power supplies, high-power server SMPS, and data center rectifiers, it offers a lower FOM and a more compact EMI filtering design in three-equal-phase topologies.

Mingjiada Electronics: Spot Supply and Support for AI Power Supply Silicon Carbide Devices

Founded in Shenzhen in 1996, Mingjiada Electronics has branches in Hong Kong, Japan, Russia, and Taiwan. The company is certified under the ISO 9001:2014 Quality Management System and ISO 14001:2014 Environmental Management System, and has long supplied power products such as Infineon CoolSiC™ MOSFETs, IGBTs, GaN transistors, and gate drivers. For AI data center and server power supply applications, Mingjiada currently offers CoolSiC™ MOSFETs covering the following key series and models:

IMBG75R Series (PG-TO263-7): IMBG75R007M2H, IMBG75R011M2H, IMBG75R016M2H, IMBG75R020M2H, IMBG75R025M2H, IMBG75R033M2H, IMBG75R040M2H, IMBG75R050M2H, IMBG75R060M2H;

IMDQ75R Series (PG-HDSOP-22, Top-Cooled): IMDQ75R011M2H, IMDQ75R020M2H, IMDQ75R033M2H, IMDQ75R040M2H, IMDQ75R050M2H;

IMZA75R Series (PG-TO247-4): IMZA75R007M2H, IMZA75R011M2H, IMZA75R016M2H, IMZA75R020M2H, IMZA75R025M2H, IMZA75R033M2H, IMZA75R040M2H, IMZA75R050M2H, IMZA75R060M2H;

1200V CoolSiC™ MOSFET G2: IMCQ120R017M2H, IMCQ120R034M2H, and other Q-DPAK top-cooled models.

In addition, Mingjiada also supplies 1200V/1700V CoolSiC™ MOSFET models such as IMBG120R008M2H, IMBG120R181M2H, IMCQ120R053M2H, IMBF170R1K0M1, and other 1200V/1700V CoolSiC™ MOSFET models, covering the high-voltage node requirements in AI data center power supply chains—from PFC to DC-DC and from PSU to BBU.

In terms of supply assurance, Mingjiada’s dual warehousing centers in Shenzhen and Hong Kong maintain a large inventory of popular models, supporting both small-batch sample purchases and high-volume orders. Urgent orders are shipped within 4 hours, while standard orders are delivered within 48 hours; all Infineon products are procured through official channels directly from the manufacturer. For component selection and validation during the AI power supply R&D phase, as well as continuous production scheduling during mass production, this “sample—small batch—mass production” tiered supply capability offers greater practical engineering value than simply listing products as spot inventory.

Contact Information

Contact: Mr. Chen

Phone: +86 13410018555

Email: sales@hkmjd.com

Website: www.integrated-ic.com

Address: Rooms 1239–1241, New Asia Guoli Building, Zhenzhong Road, Futian District, Shenzhen, Guangdong Province