Şirket Blog About Supply Infineon MOSFET Products:OptiMOS™,StrongIRFET™,CoolMOS™,CoolSiC™,Automotive MOSFETs

Supply Infineon MOSFET Products:OptiMOS™,StrongIRFET™,CoolMOS™,CoolSiC™,Automotive MOSFETs

Shenzhen Mingjiada Electronics Co., Ltd. is a specialist distributor of electronic components, offering high-quality supply services backed by extensive procurement channels and in-depth procurement expertise.

Supply Advantages:

1. Genuine Product Guarantee, Reliable Quality

Direct from Manufacturers: We have established long-term authorised partnerships with over 500 leading global semiconductor brands, ensuring legally compliant procurement.

Quality Management Systems: Certified to ISO 9001:2014 Quality Management System and ISO 14001:2014 Environmental Management System standards.

Strict Quality Control: End-to-end testing ensures 100% genuine products are supplied directly, eliminating refurbished or loose new items, and providing batch traceability services.

2. Comprehensive Product Range and Extensive Inventory

Model Coverage: Over 2 million SKUs in stock, covering general-purpose, industrial-grade, automotive-grade, military-grade and niche/obsolete ICs.

Application Areas: Covering microcontrollers, memory, power management, communications, automotive electronics, sensors, artificial intelligence, 5G and all related categories.

Inventory Advantage: Dual warehouses in Shenzhen and Hong Kong synchronise global stock in real time, effectively resolving issues such as stock shortages, discontinuations and extended lead times.

3. Efficient Delivery and Rapid Response

Express Dispatch: Standard orders delivered within 1–3 days; urgent orders dispatched within 4 hours and delivered within 24–48 hours.

Global Network: Branches in Hong Kong, Japan, Russia, Taiwan and other locations support one-stop fulfilment services for global orders.

Flexible Transactions: A variety of trade terms and settlement currencies to meet the needs of domestic and international clients.

I. OptiMOS™: The benchmark for high efficiency in medium and low voltage applications, enabling high power density designs

The OptiMOS™ series is the flagship of Infineon’s medium- and low-voltage power MOSFETs, featuring high switching efficiency and high power density. Thanks to advanced trench technology and optimised design, it has become the preferred choice for power supply applications. The series covers a voltage range from 12V to 250V, primarily comprising N-channel devices, and focuses on hard-switching applications. By achieving ultra-low switching losses, it significantly enhances system efficiency.

In terms of core characteristics, OptiMOS™ offers the industry’s best Figure of Merit (FOM), meaning the product of on-resistance (RDS(on)) and gate charge (Qg) is optimised. This maximises the reduction of conduction losses whilst minimising energy loss during switching, balancing efficiency and reliability. The latest generation of OptiMOS™ 7 utilises a unique copper metallisation process, advanced double polysilicon trench technology and 300mm wafer manufacturing. Compared to the previous generation, the RDS(on) for the 40V variant has been reduced by 25%, and a 40% reduction in RDS(on) for the 80V/100V variants, whilst offering higher avalanche current capability and robust thermal performance, with a precise gate threshold voltage range suitable for parallel configuration requirements.

A wide variety of package options are available, including S3O8 (3x3mm), SSO8, sTOLL and TOLL, amongst other compact packages. Certain models incorporate a top-cooling design, further enhancing thermal efficiency and saving PCB space. Key application areas include switch-mode power supplies (SMPS), DC-DC converters, server power supplies, telecommunications infrastructure and motor drives, making them particularly suitable for compact device designs with stringent requirements for power density and efficiency.

II. StrongIRFET™: High Cost-Effectiveness and Robustness, Suitable for General-Purpose Applications

The StrongIRFET™ series is positioned as a cost-effective range of medium- and low-voltage MOSFETs, balancing performance and cost. It is specifically designed for applications requiring high energy efficiency, compact designs and cost-sensitivity, complementing the OptiMOS™ series to collectively cover all medium- and low-voltage application scenarios. The series primarily consists of N-channel devices, with a voltage range suitable for a variety of general-purpose scenarios. It has been optimised for both low-frequency and high-frequency switching applications, offering exceptional flexibility.

In terms of key characteristics, the StrongIRFET™ offers exceptional durability and avalanche protection, ensuring stable operation under complex operating conditions and effectively enhancing system reliability. The products offer outstanding value for money and are readily available from distributors. They utilise industry-standard packages such as TO-220, D2PAK and DPAK, ensuring high compatibility and reducing design and replacement costs. Taking the StrongIRFET™ 2 series as an example, it features a VBRDSS of up to 100V, an RDS(on) as low as 1.2mΩ, and a maximum ID of 282A, with an operating temperature range spanning -55°C to 175°C, making it suitable for wide-temperature applications.

With a wide range of applications, including light electric vehicles, power tools, drones, electric bicycles, battery management systems (BMS), uninterruptible power supplies (UPS), photovoltaic systems, power adapters and chargers, these products have become the ideal choice for general industrial and consumer electronics sectors thanks to their high robustness and cost-effectiveness.

III. CoolMOS™: Pioneer of Super-Junction Technology, High-Efficiency Solutions for High-Voltage Applications

The CoolMOS™ series is Infineon’s pioneering super-junction (SJ) MOSFET product line, designed primarily for high-voltage applications with a voltage range spanning 500 V to 900 V. Thanks to its unique super-junction structure, it overcomes the performance limitations of traditional MOSFETs in high-voltage applications, achieving a perfect balance between high-voltage blocking capability and low-loss, high-speed switching. It serves as a core component in high-voltage AC-DC applications.

Its core strengths lie in its outstanding switching performance and low power consumption. The super-junction structure significantly reduces on-resistance whilst minimising switching losses. Compared to conventional high-voltage MOSFETs, efficiency is markedly improved, and the superior thermal performance effectively reduces the cost of cooling systems. This series of devices supports various topologies, including flyback, totem-pole PFC and resonant converters, and is suitable for high-voltage applications across different power ratings. Some models have obtained automotive certification, meeting AEC-Q101 and higher standards, and are suitable for automotive high-voltage applications.

Application scenarios span multiple sectors including consumer electronics, industrial equipment and renewable energy, specifically encompassing server power supplies, telecommunications infrastructure, solar inverters, electric vehicle charging equipment, high-voltage DC-DC converters and domestic air conditioning systems. They are particularly well-suited to high-power equipment requiring high voltage, high efficiency and compact designs, helping to achieve efficient energy utilisation and equipment miniaturisation.

IV. CoolSiC™: Leading with Silicon Carbide Technology to Unlock Ultimate Efficiency at High Power

The CoolSiC™ series is a range of high-end MOSFET products developed by Infineon based on silicon carbide (SiC) material. As a representative of third-generation semiconductor devices, it leverages the inherent advantages of silicon carbide to achieve a quantum leap in performance within high-voltage, high-power applications. Compared to traditional silicon-based MOSFETs, it delivers a qualitative leap in efficiency, power density and reliability.

In terms of key characteristics, CoolSiC™ MOSFETs feature an extremely low RDS(on), with switching losses far lower than those of silicon-based devices. Furthermore, they incorporate an intrinsic body diode, eliminating the need for additional freewheeling diodes and thereby simplifying circuit design. The product voltage range spans from 400V to 2000V, with RDS(on) values ranging from 7mΩ to 1000mΩ. It features exceptional gate oxide reliability, a threshold voltage (Vth) exceeding 4V, high slew rate control and Coss linearity, supports unipolar gate drive, and is 100% avalanche-tested, ensuring exceptional robustness.

Package options include module packages such as Easy 2C and HybridPACK™ Drive G2, as well as discrete packages such as TOLL and D²PAK 7-pin, catering to the requirements of applications across different power ratings. They are primarily used in high-end applications such as traction inverters for new energy vehicles, high-voltage DC-DC converters, electric vehicle charging stations (50 kW to 350 kW), battery energy storage systems (BESS), rail transport, photovoltaic inverters and solid-state circuit breakers (SSCB), helping to achieve energy efficiency, miniaturisation and extended service life in equipment.

V. Automotive MOSFETs: Backed by Rigorous Standards, Empowering Automotive Electronics Upgrades

Infineon’s automotive MOSFET series comprises power devices specifically tailored for automotive electronics applications. Leveraging core technologies such as OptiMOS™, CoolMOS™ and CoolSiC™, and addressing the stringent requirements of the automotive industry, the series offers a product portfolio characterised by high reliability, durability and adaptability. With a voltage range spanning 20V to 800V and capable of delivering high current output, all products comply with the AEC-Q101 standard, with some products exceeding this standard to ensure automotive-grade quality.

In terms of key features, automotive MOSFETs offer low RDS(on), robust thermal performance, excellent gate robustness and fast switching speeds. The packages utilise robust designs such as QDPAK, TOLT, SSO10T and sTOLL, with some models supporting top cooling to enhance thermal efficiency. They are also compact and easy to handle, making them suitable for the confined installation spaces found in automotive applications. Furthermore, Infineon offers a comprehensive lifetime assurance programme for its automotive OptiMOS™ products, supporting customers’ long-term production planning and ensuring supply chain stability and long-term product availability.

Depending on voltage rating and application, automotive MOSFETs can be categorised into several sub-series: the 30V–40V series is suitable for 12V vehicle electrical systems and is used in automotive LED lighting, seat adjustment and sunroof control; the 55V–100V series is suitable for 12V and 24V vehicle electrical systems and is used in electric power steering (EPS) and electromechanical braking systems (EMB); the 120V–300V series is designed for >48V vehicle electrical systems and is used in high-power motor drives; the 600V–800V series utilises CoolMOS™ technology and is employed in high-end applications such as electric vehicle charging and high-voltage DC-DC conversion. Furthermore, the CoolSiC™ series now offers automotive-grade products for core components such as traction inverters in new energy vehicles, supporting the electrification and intelligent upgrading of the automotive industry.